NTE2940 mosfet n ? channel, enhancement mode high speed switch features: low static drain ? source on resistance improved inductive ruggedness fast switching times low input capacitance extended safe operating area to220 type isolated package absolute maximum ratings: drain ? source voltage (note 1), v dss 60v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . drain ? gate voltage (r gs = 1m ? , note 1), v dgr 60v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate ? source voltage, v gs 20v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . drain current, i d continuous t c = +25 c 15a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t c = +100 c 10a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pulsed (note 2) 60a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current (pulsed), i gm 1.5a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . single pulsed avalanche energy (note 3), e as 9.5mj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . avalanche current, i as 15a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total power dissipation (t c = +25 c), p d 48w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate above 25 c 0.32w/ c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature range, t j ? 55 to +175 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ? 55 to +175 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . maximum lead temperature (during soldering, 1/8? from case, 5sec), t l +300 c . . . . . . . . . . . . . . thermal resistance: maximum junction ? to ? case, r thjc 3.12k/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . typical case ? to ? sink (mounting surface flat, smooth, and greased), r thcs 0.5k/w . . . . . . . maximum junction ? to ? ambient (free air operation), r thja 62.5k/w . . . . . . . . . . . . . . . . . . . . note 1. t j = +25 to +175 c. note 2. repetitive rating: pulse width limited by maximum junction temperature. note 3. l = 100 h, v dd = 25v, r g = 25 ? , starting t j = +25 c.
electrical characteristics: (t c = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit drain ? source breakdown voltage bv dss v gs = 0v, i d = 250 a 60 ? ? v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 ? 4.0 v gate ? source leakage forward i gss v gs = 20v ? ? 100 na gate ? source leakage reverse i gss v gs = ? 20v ? ? ? 100 na zero gate voltage drain current i dss v ds = max. rating, v gs = 0 ? ? 250 a v ds = 0.8 max. rating, t c = +150 c ? ? 1000 a static drain ? source on resistance r ds(on) v gs = 10v, i d = 8a, note 4 ? ? 0.10 ? forward transconductance g fs v ds 50v, i d = 8a, note 4 5.6 ? ? mhos input capacitance c iss v gs = 0v, v ds = 25v, f = 1mhz ? 635 ? pf output capacitance c oss ? 218 ? pf reverse transfer capacitance c rss ? 105 ? pf turn ? on delay time t d(on) v dd = 0.5 bv dss, i d = 15a, z o = 24 ? , (mosfet switching times are essentially ? ? 30 ns rise time t r , (mosfet switching times are essentially independent of operating temperature) ? ? 90 ns turn ? off delay time t d(off) independent of operating temperature) ? ? 40 ns fall time t f ? ? 30 ns total gate charge (gate ? source plus gate ? drain) q g v gs = 10v, i d = 15a, v ds = 0.8 max. rating (gate charge is essentially indepen ? ? 33 nc gate ? source charge q gs rating, (gate charge is essentially indepen- dent of operating temperature) ? 6.3 ? nc gate ? drain (?miller?) charge q gd dent of operating temperature) ? 12.3 ? nc source ? drain diode ratings and characteristics continuous source current i s (body diode) ? ? 1.5 a pulse source current i sm (body diode) note 2 ? ? 60 a diode forward voltage v sd t j = +25 c, i s = 15a, v gs = 0v, note 4 ? ? 1.5 v reverse recovery time t rr t j = +25 c, i f = 15a, di f /dt = 100a/ s ? ? 310 ns note 2. repetitive rating: pulse width limited by maximum junction temperature. note 4. pulse test: pulse width 300 s, duty cycle 2%.
gd s .100 (2.54) .059 (1.5) max .122 (3.1) dia .165 (4.2) .531 (13.5) min .295 (7.5) .669 (17.0) max .402 (10.2) max .224 (5.7) max .114 (2.9) max .173 (4.4) max
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